| PART |
Description |
Maker |
| PWR-6G |
USB Power Sensor 50Ω -30 dBm to 20 dBm, 1 to 6000 MHz
USB Power Sensor 50楼? -30 dBm to 20 dBm, 1 to 6000 MHz
|
Mini-Circuits
|
| CLY5 |
High Power Packaged GaAs FET; 26.5 dBm
|
TriQuint Semiconductor
|
| TUF-R3LHSM |
High Reliability Mixer Level 10 (LO Power 10 dBm) 0.3 to 400 MHz
|
Mini-Circuits
|
| TUF-R2MHSM |
High Reliability Mixer Level 13 (LO Power 13 dBm) 50 to 1000 MHz
|
Mini-Circuits
|
| ADE-R1MHW |
High Reliability Mixer Level 13 (LO Power 13 dBm) 5 to 600 MHz
|
Mini-Circuits
|
| ADE-R11X |
High Reliability Mixer Level 7 (LO Power 7 dBm) 10 to 2000 MHz
|
Mini-Circuits
|
| TUF-R1MHSM |
High Reliability Mixer Level 13 (LO Power 13 dBm) 5 to 600 MHz
High Reliability Mixer Level 13 (LO Power 13 dBm) 5 to 600 MHz
|
Mini-Circuits
|
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| ATF-511P8-BLK ATF-511P8-TR2 ATF-511P8-TR1 ATF-511P |
C BAND, Si, N-CHANNEL, RF POWER, HEMFET 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
High Linearity Enhancement Mode
ATF-511P8 · Single Voltage E-pHEMT Low Noise 41.7 dBm OIP3 in LPCC
|
Agilent Technologies, Inc.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| TM120-155-07-29 |
12 - 15.5 GHz 29 dBm Power Module
|
Transcom, Inc.
|
| TM059-064-09-39 |
5.9 - 6.4 GHz 39 dBm Power Module
|
Transcom, Inc.
|
